
LEON-G100/G200 - System Integration Manual
GSM.G1-HW-09002-C Preliminary System description
Page 41 of 75
1.10 SIM interface
An SIM card interface is provided on the board-to-board pins of the module: the high-speed SIM/ME interface is
implemented as well as automatic detection of the required SIM supporting voltage.
Both 1.8 V and 3 V SIM types are supported: activation and deactivation with automatic voltage switch from 1.8
to 3 V is implemented, according to ISO-IEC 78-16-e specifications. The SIM driver supports the PPS (Protocol
and Parameter Selection) procedure for baud-rate selection, according to the values determined by the SIM
Card.
Table 7 describes the board to board pins related to the SIM interface:
1.80 V typical or 2.85 V typical automatically generated by the
module
Table 7: SIM Interface pins
Figure 25 shows the circuit with the minimal connections between the LEON module and the SIM card.
Figure 25: SIM interface application circuit
When connecting the module to SIM connector perform the following steps on the application board:
To prevent RF coupling: ground via a 47 pF capacitor (e.g. Murata GRM1555C1H470J) near the SIM
connector on each SIM signal (SIM_CLK, SIM_IO, SIM_RST)
Ground via a 100 nF capacitor (e.g. Murata GRM155R71C104K) on the SIM supply (VSIM).
Mount very low capacitance ESD protection (e.g. Infineon ESD8V0L2B-03L or AVX USB0002RP) near the
SIM card connector
Limit capacitance on each SIM signal to match the SIM specifications: the connections should always be
routed as short as possible
LEON-G100/G200
34
33
32
35VSIM
SIM_IO
SIM_CLK
SIM_RST
LEON-G100/G200
34
33
32
35VSIM
SIM_IO
SIM_CLK
SIM_RST
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